Abstract
This paper uses X-ray absorption spectroscopy and vacuum ultra-violet spectroscopic ellipsometry to study the electronic structure of high-k transition metal (TM) oxide gate dielectrics. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d* states, which define the optical band gap, including their relationship to the band gap, Eg, of the oxide.
Original language | English (US) |
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Pages (from-to) | 917-919 |
Number of pages | 3 |
Journal | Journal of Electron Spectroscopy and Related Phenomena |
Volume | 144-147 |
DOIs | |
State | Published - Jun 2005 |
Externally published | Yes |
Keywords
- Intra- and inter-atomic transitions
- Spectroscopic ellipsometry
- Transition metal oxides
- X-ray absorption spectra
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Radiation
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Spectroscopy
- Physical and Theoretical Chemistry