Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2

Zhiyong Xiao, Jingfeng Song, David K. Ferry, Stephen Ducharme, Xia Hong

Research output: Contribution to journalArticlepeer-review

54 Scopus citations


We exploit scanning-probe-controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS2 between a transistor and a junction state. In the presence of a domain wall, MoS2 exhibits rectified I-V characteristics that are well described by the thermionic emission model. The induced Schottky barrier height ΦBeff varies from 0.38 to 0.57 eV and is tunable by a SiO2 global back gate, while the tuning range of ΦBeff depends sensitively on the conduction-band-tail trapping states. Our work points to a new route to achieving programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.

Original languageEnglish (US)
Article number236801
JournalPhysical Review Letters
Issue number23
StatePublished - Jun 8 2017

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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