TY - JOUR
T1 - Fabrication of PZT/CuO composite films and their photovoltaic properties
AU - Song, Yang
AU - Li, Lingwei
AU - Chen, Yuanqing
AU - Li, Fengzhu
AU - Qu, Wenwen
AU - Wu, Huimin
AU - Yerramilli, Aditya S.
AU - Alford, Terry
AU - Zheng, Haiwu
N1 - Funding Information:
This work was support by the National Natural Science Foundation of Grant (No. 51372069), Scientific and Technological Project in Henan province (172102210013), the Research Projects of the Scientific and Technological Department Henan Province, Technology Innovation Talents in University of Henan Province (14HASTIT038) and Doctor Start-up Research Funds of Xi’an University of Technology(101-451117001). The authors declare that they have no conflict of interest.
Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2018/8/1
Y1 - 2018/8/1
N2 - Abstract: The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)O3 (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/cm2 after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. [Figure not available: see fulltext.].
AB - Abstract: The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)O3 (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/cm2 after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. [Figure not available: see fulltext.].
KW - CuO
KW - Ferroelectric thin film
KW - PZT
KW - Photovoltaic effect
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U2 - 10.1007/s10971-018-4727-6
DO - 10.1007/s10971-018-4727-6
M3 - Article
AN - SCOPUS:85048980865
SN - 0928-0707
VL - 87
SP - 285
EP - 291
JO - Journal of Sol-Gel Science and Technology
JF - Journal of Sol-Gel Science and Technology
IS - 2
ER -