Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices

B. J. Skromme; R. Bhat; M. A. Koza

doi:10.1016/0038-1098(88)90978-7

Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices

B. J. Skromme, R. Bhat, M. A. Koza

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12 Scopus citations

Abstract

Extrinsic luminescence involving residual donor and acceptor impurities in a nominally undoped, coupled-well 80 Å GaAs/20 Å Al_0.3Ga_0.7As superlattice grown by organomettalic chemical vapor deposition has been investigated. Separate peaks are observed in the luminescence lineshape corresponding to acceptors in the barriers and in the wells, with ionization energies of about 13.5 and 31.9 meV, respectively. The relative amplitudes of the peaks indicate that most of the acceptors are located in the AlGaAs barriers. Varying the temperature from 1.7 to 31 K and the excitation intensity from 0.28 to 1400 mW cm^-2 reveals both donor-to-acceptor and miniband-to-acceptor recombination involving each type of acceptor.

Original language	English (US)
Pages (from-to)	543-547
Number of pages	5
Journal	Solid State Communications
Volume	66
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(88)90978-7
State	Published - May 1988
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(88)90978-7

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title = "Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices",

abstract = "Extrinsic luminescence involving residual donor and acceptor impurities in a nominally undoped, coupled-well 80 {\AA} GaAs/20 {\AA} Al0.3Ga0.7As superlattice grown by organomettalic chemical vapor deposition has been investigated. Separate peaks are observed in the luminescence lineshape corresponding to acceptors in the barriers and in the wells, with ionization energies of about 13.5 and 31.9 meV, respectively. The relative amplitudes of the peaks indicate that most of the acceptors are located in the AlGaAs barriers. Varying the temperature from 1.7 to 31 K and the excitation intensity from 0.28 to 1400 mW cm-2 reveals both donor-to-acceptor and miniband-to-acceptor recombination involving each type of acceptor.",

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T1 - Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices

AU - Skromme, B. J.

AU - Bhat, R.

AU - Koza, M. A.

PY - 1988/5

Y1 - 1988/5

N2 - Extrinsic luminescence involving residual donor and acceptor impurities in a nominally undoped, coupled-well 80 Å GaAs/20 Å Al0.3Ga0.7As superlattice grown by organomettalic chemical vapor deposition has been investigated. Separate peaks are observed in the luminescence lineshape corresponding to acceptors in the barriers and in the wells, with ionization energies of about 13.5 and 31.9 meV, respectively. The relative amplitudes of the peaks indicate that most of the acceptors are located in the AlGaAs barriers. Varying the temperature from 1.7 to 31 K and the excitation intensity from 0.28 to 1400 mW cm-2 reveals both donor-to-acceptor and miniband-to-acceptor recombination involving each type of acceptor.

AB - Extrinsic luminescence involving residual donor and acceptor impurities in a nominally undoped, coupled-well 80 Å GaAs/20 Å Al0.3Ga0.7As superlattice grown by organomettalic chemical vapor deposition has been investigated. Separate peaks are observed in the luminescence lineshape corresponding to acceptors in the barriers and in the wells, with ionization energies of about 13.5 and 31.9 meV, respectively. The relative amplitudes of the peaks indicate that most of the acceptors are located in the AlGaAs barriers. Varying the temperature from 1.7 to 31 K and the excitation intensity from 0.28 to 1400 mW cm-2 reveals both donor-to-acceptor and miniband-to-acceptor recombination involving each type of acceptor.

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Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices

Abstract

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