External quantum efficiency of monolayer MoTe2 based near-infrared light emitting diodes

Jiabin Feng; Yongzhuo Li; Song Fu; Zhang Jianxing; Zizhao Zhong; Hao Sun; Lin Gan; C. Z. Ning

doi:10.1364/CLEO_SI.2019.STh3O.1

External quantum efficiency of monolayer MoTe₂ based near-infrared light emitting diodes

Jiabin Feng, Yongzhuo Li, Song Fu, Zhang Jianxing, Zizhao Zhong, Hao Sun, Lin Gan, C. Z. Ning

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10^-4 ~ 5×10^-3 at 5~300K.

Original language	English (US)
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2019
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580576
DOIs	https://doi.org/10.1364/CLEO_SI.2019.STh3O.1
State	Published - 2019
Event	CLEO: Science and Innovations, CLEO_SI 2019 - San Jose, United States Duration: May 5 2019 → May 10 2019

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F129-CLEO_SI 2019
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2019
Country/Territory	United States
City	San Jose
Period	5/5/19 → 5/10/19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Access to Document

10.1364/CLEO_SI.2019.STh3O.1

Cite this

Feng, J., Li, Y., Fu, S., Jianxing, Z., Zhong, Z., Sun, H., Gan, L., & Ning, C. Z. (2019). External quantum efficiency of monolayer MoTe₂ based near-infrared light emitting diodes. In CLEO: Science and Innovations, CLEO_SI 2019 (Optics InfoBase Conference Papers; Vol. Part F129-CLEO_SI 2019). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/CLEO_SI.2019.STh3O.1

External quantum efficiency of monolayer MoTe₂ based near-infrared light emitting diodes. / Feng, Jiabin; Li, Yongzhuo; Fu, Song et al.
CLEO: Science and Innovations, CLEO_SI 2019. Optica Publishing Group (formerly OSA), 2019. (Optics InfoBase Conference Papers; Vol. Part F129-CLEO_SI 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Feng, J, Li, Y, Fu, S, Jianxing, Z, Zhong, Z, Sun, H, Gan, L & Ning, CZ 2019, External quantum efficiency of monolayer MoTe₂ based near-infrared light emitting diodes. in CLEO: Science and Innovations, CLEO_SI 2019. Optics InfoBase Conference Papers, vol. Part F129-CLEO_SI 2019, Optica Publishing Group (formerly OSA), CLEO: Science and Innovations, CLEO_SI 2019, San Jose, United States, 5/5/19. https://doi.org/10.1364/CLEO_SI.2019.STh3O.1

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title = "External quantum efficiency of monolayer MoTe2 based near-infrared light emitting diodes",

abstract = "We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-4 ~ 5×10-3 at 5~300K.",

author = "Jiabin Feng and Yongzhuo Li and Song Fu and Zhang Jianxing and Zizhao Zhong and Hao Sun and Lin Gan and Ning, {C. Z.}",

note = "Funding Information: This research is supported by the National Science Foundation of China (Grant No. 91750206, No. 61705118, No. 11774412), the Beijing Center for Future Chips, Beijing National Research Center for Information Science and Technology, Tsinghua University Initiative Scientific Research Program (No. 20141081296). Publisher Copyright: {\textcopyright} 2019 The Author(s); CLEO: Science and Innovations, CLEO_SI 2019 ; Conference date: 05-05-2019 Through 10-05-2019",

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AU - Feng, Jiabin

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AU - Fu, Song

AU - Jianxing, Zhang

AU - Zhong, Zizhao

AU - Sun, Hao

AU - Gan, Lin

AU - Ning, C. Z.

N1 - Funding Information: This research is supported by the National Science Foundation of China (Grant No. 91750206, No. 61705118, No. 11774412), the Beijing Center for Future Chips, Beijing National Research Center for Information Science and Technology, Tsinghua University Initiative Scientific Research Program (No. 20141081296). Publisher Copyright: © 2019 The Author(s)

PY - 2019

Y1 - 2019

N2 - We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-4 ~ 5×10-3 at 5~300K.

AB - We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-4 ~ 5×10-3 at 5~300K.

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