External cavity mid-infrared semiconductor lasers

Han Q. Le, George W. Turner, Juan R. Ochoa, M. J. Manfra, C. C. Cook, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations


GaSb-based and InAs-based semiconductor gain media with band-edge wavelengths between 3.3 to 4 μm were used in grating-tuned external cavity configuration. Output wavelength was tuned up to approximately 9.5% of the center wavelength; and power from few tens of mW to 0.2-W peak, 20- mW average was achieved at 80 K operation. The tuning range is approximately 2 - 3 times wider than those of near-IR semiconductor lasers, as expected for mid-IR semiconductors which have smaller electron masses. The external cavity laser had a multimode linewidth of 1 - 2 nm, which was approximately 10 to 20 times narrower than that of a free running laser. Analysis of the gain/loss spectral properties indicates that the tuning range is still severely limited by facet anti-reflection coating and non-optimal wafer structure. Model calculation indicates a tuning range a few times larger is possible with more optimal wafer design.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsHong K. Choi, Peter S. Zory
Place of PublicationBellingham, WA, United States
PublisherSociety of Photo-Optical Instrumentation Engineers
Number of pages11
ISBN (Print)0819424129
StatePublished - 1997
EventIn-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared - San Jose, CA, USA
Duration: Feb 10 1997Feb 13 1997


OtherIn-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Applied Mathematics
  • Computer Science Applications
  • Electronic, Optical and Magnetic Materials


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