Extended defects in GaAs/GaAs1-xSbx/GaAs (001) heterostructures

Abhinandan Gangopadhyay; Chaomin Zhang; Aymeric Maros; Nikolai Faleev; Richard R. King; Christiana B. Honsberg; David J. Smith

doi:10.1016/j.scriptamat.2022.115150

Extended defects in GaAs/GaAs_1-xSb_x/GaAs (001) heterostructures

Abhinandan Gangopadhyay, Chaomin Zhang, Aymeric Maros, Nikolai Faleev, Richard R. King, Christiana B. Honsberg, David J. Smith

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The atomic-scale structure of extended defects in GaAs/GaAs_1-xSb_x/GaAs (001) heterostructures has been characterized using aberration-corrected scanning transmission electron microscopy. The defect located at the tensile-strained GaAs(cap)/GaAs_0.34Sb_0.66 interface had no edge component in the {11¯0} projection plane and is identified as either a dissociated screw dislocation or a partial dislocation dipole. The associated intrinsic stacking fault is bounded by two 30° Shockley partial dislocations of opposite sign. Another defect, located at the compressively-strained GaAs_0.91Sb_0.09/GaAs(substrate) interface, is identified as a dissociated 90° dislocation. The associated intrinsic stacking fault is bounded by a 30° Shockley partial dislocation and a partial dislocation with a Burgers vector of either a/6[411¯] or a/6[141¯], where a is the lattice constant. Unpaired atomic columns observed at the cores of the 30° Shockley partial dislocations indicate that both defects belong primarily to the glide set.

Original language	English (US)
Article number	115150
Journal	Scripta Materialia
Volume	225
DOIs	https://doi.org/10.1016/j.scriptamat.2022.115150
State	Published - Mar 1 2023

Keywords

Compound semiconductors
Dislocations
HAADF-STEM
Intrinsic stacking faults

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Access to Document

10.1016/j.scriptamat.2022.115150

Cite this

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title = "Extended defects in GaAs/GaAs1-xSbx/GaAs (001) heterostructures",

abstract = "The atomic-scale structure of extended defects in GaAs/GaAs1-xSbx/GaAs (001) heterostructures has been characterized using aberration-corrected scanning transmission electron microscopy. The defect located at the tensile-strained GaAs(cap)/GaAs0.34Sb0.66 interface had no edge component in the {11¯0} projection plane and is identified as either a dissociated screw dislocation or a partial dislocation dipole. The associated intrinsic stacking fault is bounded by two 30° Shockley partial dislocations of opposite sign. Another defect, located at the compressively-strained GaAs0.91Sb0.09/GaAs(substrate) interface, is identified as a dissociated 90° dislocation. The associated intrinsic stacking fault is bounded by a 30° Shockley partial dislocation and a partial dislocation with a Burgers vector of either a/6[411¯] or a/6[141¯], where a is the lattice constant. Unpaired atomic columns observed at the cores of the 30° Shockley partial dislocations indicate that both defects belong primarily to the glide set.",

keywords = "Compound semiconductors, Dislocations, HAADF-STEM, Intrinsic stacking faults",

author = "Abhinandan Gangopadhyay and Chaomin Zhang and Aymeric Maros and Nikolai Faleev and King, {Richard R.} and Honsberg, {Christiana B.} and Smith, {David J.}",

note = "Funding Information: This work was supported by the National Science Foundation and the Department of Energy under NSF CA No. EEC-1041895, and also by ARO Grant W911WF-16-1-0263. The authors acknowledge the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. Publisher Copyright: {\textcopyright} 2022",

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AU - Gangopadhyay, Abhinandan

AU - Zhang, Chaomin

AU - Maros, Aymeric

AU - Faleev, Nikolai

AU - King, Richard R.

AU - Honsberg, Christiana B.

AU - Smith, David J.

N1 - Funding Information: This work was supported by the National Science Foundation and the Department of Energy under NSF CA No. EEC-1041895, and also by ARO Grant W911WF-16-1-0263. The authors acknowledge the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. Publisher Copyright: © 2022

PY - 2023/3/1

Y1 - 2023/3/1

N2 - The atomic-scale structure of extended defects in GaAs/GaAs1-xSbx/GaAs (001) heterostructures has been characterized using aberration-corrected scanning transmission electron microscopy. The defect located at the tensile-strained GaAs(cap)/GaAs0.34Sb0.66 interface had no edge component in the {11¯0} projection plane and is identified as either a dissociated screw dislocation or a partial dislocation dipole. The associated intrinsic stacking fault is bounded by two 30° Shockley partial dislocations of opposite sign. Another defect, located at the compressively-strained GaAs0.91Sb0.09/GaAs(substrate) interface, is identified as a dissociated 90° dislocation. The associated intrinsic stacking fault is bounded by a 30° Shockley partial dislocation and a partial dislocation with a Burgers vector of either a/6[411¯] or a/6[141¯], where a is the lattice constant. Unpaired atomic columns observed at the cores of the 30° Shockley partial dislocations indicate that both defects belong primarily to the glide set.

AB - The atomic-scale structure of extended defects in GaAs/GaAs1-xSbx/GaAs (001) heterostructures has been characterized using aberration-corrected scanning transmission electron microscopy. The defect located at the tensile-strained GaAs(cap)/GaAs0.34Sb0.66 interface had no edge component in the {11¯0} projection plane and is identified as either a dissociated screw dislocation or a partial dislocation dipole. The associated intrinsic stacking fault is bounded by two 30° Shockley partial dislocations of opposite sign. Another defect, located at the compressively-strained GaAs0.91Sb0.09/GaAs(substrate) interface, is identified as a dissociated 90° dislocation. The associated intrinsic stacking fault is bounded by a 30° Shockley partial dislocation and a partial dislocation with a Burgers vector of either a/6[411¯] or a/6[141¯], where a is the lattice constant. Unpaired atomic columns observed at the cores of the 30° Shockley partial dislocations indicate that both defects belong primarily to the glide set.

KW - Compound semiconductors

KW - Dislocations

KW - HAADF-STEM

KW - Intrinsic stacking faults

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