@inproceedings{71506b40177a440baa8af14f2cd59aab,
title = "Exploiting NbOx metal-insulator-transition device as oscillation neuron for neuro-inspired computing",
abstract = "In this work, we fabricated the Pt/NbOx/Pt MIT device showing threshold switching. XPS results revealed that there are mixed NbO2 and Nb2O5 phases in the NbOx thin film. The self-oscillation of NbOx device with a resistor has been demonstrated, showing its feasibility as an oscillation neuron.",
keywords = "Metal-insulator-transition, NbO, neuro-inspired computing, neuron, oscillation",
author = "Ligang Gao and Chen, {Pai Yu} and Shimeng Yu",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 ; Conference date: 28-02-2017 Through 02-03-2017",
year = "2017",
month = jun,
day = "13",
doi = "10.1109/EDTM.2017.7947555",
language = "English (US)",
series = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "152--153",
booktitle = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",
}