We have developed a new electron microscopy technique called fluctuation microscopy which is sensitive to medium-range order in disordered materials. The technique relies on quantitative statistical analysis of low-resolution dark-field electron micrographs. Extracting useful information from such micrographs involves correcting for the effects of the imaging system, incoherent image contrast caused by large scale structure in the sample, and the effects of the foil thickness.
|Title of host publication
|Materials Research Society Symposium - Proceedings
|Number of pages
|Published - 2000
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials