Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers

A. Bell; S. Srinivasan; C. Plumlee; H. Omiya; Fernando Ponce; J. Christen; S. Tanaka; A. Fujioka; Y. Nakagawa

doi:10.1063/1.1689736

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al _xGa _1-xN layers

A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, Fernando Ponce, J. Christen, S. Tanaka, A. Fujioka, Y. Nakagawa

Physics

Research output: Contribution to journal › Article › peer-review

131 Scopus citations

Abstract

The Al _xGa _1-xN layers with 0.05≤x≤0.25 were discussed using spectrally and time resolved cathodoluminescence. An s-shaped temperature dependence characterisitc of disordered systems was exhibited by the near-band-edge peak emission energy. The shift in the luminescence peak position with respect to the usual temperature dependence of the band gap was quantified. Analysis shows that at elevated temperatures, when the excitons were delocalized, the decay was significantly faster.

Original language	English (US)
Pages (from-to)	4670-4674
Number of pages	5
Journal	Journal of Applied Physics
Volume	95
Issue number	9
DOIs	https://doi.org/10.1063/1.1689736
State	Published - May 1 2004

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1689736

Cite this

@article{243197a535df4c1491906045fed909ad,

title = "Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers",

abstract = "The Al xGa 1-xN layers with 0.05≤x≤0.25 were discussed using spectrally and time resolved cathodoluminescence. An s-shaped temperature dependence characterisitc of disordered systems was exhibited by the near-band-edge peak emission energy. The shift in the luminescence peak position with respect to the usual temperature dependence of the band gap was quantified. Analysis shows that at elevated temperatures, when the excitons were delocalized, the decay was significantly faster.",

author = "A. Bell and S. Srinivasan and C. Plumlee and H. Omiya and Fernando Ponce and J. Christen and S. Tanaka and A. Fujioka and Y. Nakagawa",

year = "2004",

month = may,

day = "1",

doi = "10.1063/1.1689736",

language = "English (US)",

volume = "95",

pages = "4670--4674",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers

AU - Bell, A.

AU - Srinivasan, S.

AU - Plumlee, C.

AU - Omiya, H.

AU - Ponce, Fernando

AU - Christen, J.

AU - Tanaka, S.

AU - Fujioka, A.

AU - Nakagawa, Y.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The Al xGa 1-xN layers with 0.05≤x≤0.25 were discussed using spectrally and time resolved cathodoluminescence. An s-shaped temperature dependence characterisitc of disordered systems was exhibited by the near-band-edge peak emission energy. The shift in the luminescence peak position with respect to the usual temperature dependence of the band gap was quantified. Analysis shows that at elevated temperatures, when the excitons were delocalized, the decay was significantly faster.

AB - The Al xGa 1-xN layers with 0.05≤x≤0.25 were discussed using spectrally and time resolved cathodoluminescence. An s-shaped temperature dependence characterisitc of disordered systems was exhibited by the near-band-edge peak emission energy. The shift in the luminescence peak position with respect to the usual temperature dependence of the band gap was quantified. Analysis shows that at elevated temperatures, when the excitons were delocalized, the decay was significantly faster.

UR - http://www.scopus.com/inward/record.url?scp=2442486860&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442486860&partnerID=8YFLogxK

U2 - 10.1063/1.1689736

DO - 10.1063/1.1689736

M3 - Article

AN - SCOPUS:2442486860

SN - 0021-8979

VL - 95

SP - 4670

EP - 4674

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al _xGa _1-xN layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this