Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer

H. X. Liu; Stephen Y. Wu; Rakesh Singh; Nathan Newman

doi:10.1063/1.2014936

Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer

H. X. Liu, Stephen Y. Wu, Rakesh Singh, Nathan Newman

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70 Oe when measured after a positive field cooling. An enhancement of the coercive field of the Cr-doped GaN film is also found when the exchange-biasing MnO overlayer is present. The mechanism responsible for the exchange bias is attributed to the exchange coupling at the ferromagnetic Cr-GaNantiferromagnetic MnO interface.

Original language	English (US)
Article number	046106
Journal	Journal of Applied Physics
Volume	98
Issue number	4
DOIs	https://doi.org/10.1063/1.2014936
State	Published - Aug 15 2005

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer",

abstract = "We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70 Oe when measured after a positive field cooling. An enhancement of the coercive field of the Cr-doped GaN film is also found when the exchange-biasing MnO overlayer is present. The mechanism responsible for the exchange bias is attributed to the exchange coupling at the ferromagnetic Cr-GaNantiferromagnetic MnO interface.",

author = "Liu, {H. X.} and Wu, {Stephen Y.} and Rakesh Singh and Nathan Newman",

note = "Funding Information: This work was supported by the Defense Advanced Research Projects Agency (DARPA) and administrated by the Office of Naval Research (Contract No. N00014-02-1-0598). We acknowledge the use of facilities within the Center for Solid State Science at Arizona State University. The authors also thank Cameron Beach for his assistance with XRD measurements.",

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doi = "10.1063/1.2014936",

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T1 - Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer

AU - Liu, H. X.

AU - Wu, Stephen Y.

AU - Singh, Rakesh

AU - Newman, Nathan

N1 - Funding Information: This work was supported by the Defense Advanced Research Projects Agency (DARPA) and administrated by the Office of Naval Research (Contract No. N00014-02-1-0598). We acknowledge the use of facilities within the Center for Solid State Science at Arizona State University. The authors also thank Cameron Beach for his assistance with XRD measurements.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70 Oe when measured after a positive field cooling. An enhancement of the coercive field of the Cr-doped GaN film is also found when the exchange-biasing MnO overlayer is present. The mechanism responsible for the exchange bias is attributed to the exchange coupling at the ferromagnetic Cr-GaNantiferromagnetic MnO interface.

AB - We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70 Oe when measured after a positive field cooling. An enhancement of the coercive field of the Cr-doped GaN film is also found when the exchange-biasing MnO overlayer is present. The mechanism responsible for the exchange bias is attributed to the exchange coupling at the ferromagnetic Cr-GaNantiferromagnetic MnO interface.

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Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer

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