Evolution of subgrain boundaries in heteroepitaxial GaN/AlN/6H-SiC grown by metalorganic chemical vapor deposition

H. X. Liu, G. N. Ali, K. C. Palle, M. K. Mikhov, Brian Skromme, Z. J. Reitmeyer, R. F. Davis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

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Engineering & Materials Science

Chemical Compounds