Evidence for inter-miniband scattering due to electron heating in Si: SiGe quantum wells grown on tilted substrates

S. Kaya; T. J. Thornton; P. W. Green; K. Fobelets; J. M. Fernández

doi:10.1002/1521-3951(199711)204:1<227::AID-PSSB227>3.0.CO;2-Z

Evidence for inter-miniband scattering due to electron heating in Si: SiGe quantum wells grown on tilted substrates

S. Kaya, T. J. Thornton, P. W. Green, K. Fobelets, J. M. Fernández

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have measured the magneto-transport properties of Si: SiGe quantum wells grown on (001) and (118) substrates as a function of applied bias. While the on-axis samples show conventional effects due to electron heating, the tilted substrates display a markedly different behaviour. A Fourier transform analysis of the Shubnikov-de Haas oscillations is presented. The FFT power spectrum from (118) quantum well wires aligned along the tilt direction shows evidence that the miniband, which is known to exist in these tilted samples, is being occupied with electrons excited by the electric field.

Original language	English (US)
Pages (from-to)	227-229
Number of pages	3
Journal	Physica Status Solidi (B) Basic Research
Volume	204
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(199711)204:1<227::AID-PSSB227>3.0.CO;2-Z
State	Published - Nov 1997
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(199711)204:1<227::AID-PSSB227>3.0.CO;2-Z

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abstract = "We have measured the magneto-transport properties of Si: SiGe quantum wells grown on (001) and (118) substrates as a function of applied bias. While the on-axis samples show conventional effects due to electron heating, the tilted substrates display a markedly different behaviour. A Fourier transform analysis of the Shubnikov-de Haas oscillations is presented. The FFT power spectrum from (118) quantum well wires aligned along the tilt direction shows evidence that the miniband, which is known to exist in these tilted samples, is being occupied with electrons excited by the electric field.",

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T1 - Evidence for inter-miniband scattering due to electron heating in Si

T2 - SiGe quantum wells grown on tilted substrates

AU - Kaya, S.

AU - Thornton, T. J.

AU - Green, P. W.

AU - Fobelets, K.

AU - Fernández, J. M.

PY - 1997/11

Y1 - 1997/11

N2 - We have measured the magneto-transport properties of Si: SiGe quantum wells grown on (001) and (118) substrates as a function of applied bias. While the on-axis samples show conventional effects due to electron heating, the tilted substrates display a markedly different behaviour. A Fourier transform analysis of the Shubnikov-de Haas oscillations is presented. The FFT power spectrum from (118) quantum well wires aligned along the tilt direction shows evidence that the miniband, which is known to exist in these tilted samples, is being occupied with electrons excited by the electric field.

AB - We have measured the magneto-transport properties of Si: SiGe quantum wells grown on (001) and (118) substrates as a function of applied bias. While the on-axis samples show conventional effects due to electron heating, the tilted substrates display a markedly different behaviour. A Fourier transform analysis of the Shubnikov-de Haas oscillations is presented. The FFT power spectrum from (118) quantum well wires aligned along the tilt direction shows evidence that the miniband, which is known to exist in these tilted samples, is being occupied with electrons excited by the electric field.

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Evidence for inter-miniband scattering due to electron heating in Si: SiGe quantum wells grown on tilted substrates

Abstract

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