TY - GEN
T1 - Evaluation of metal oxides prepared by reactive sputtering as carrier-selective contacts for crystalline silicon solar cells
AU - Boccard, Mathieu
AU - Ding, Laura
AU - Koswatta, Priyaranga
AU - Bertoni, Mariana
AU - Holman, Zachary
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/12/14
Y1 - 2015/12/14
N2 - With high quality silicon wafers nowadays available at a low cost, further technology improvement relies on the development of inexpensive and highly efficient carrier-selective contacts (CSC). To this respect, evaporated MoOx hole-selective contacts recently brought some attention due to impressive transparency and carrier selectivity properties, and other materials are widely studied in other photovoltaics technologies (TiO2, WO3, V2O5, ... ). Compared to standard heterojunction devices using amorphous silicon as passivating layer and CSC, reported efficiencies for devices using evaporated MoOx layers still fall short due to carrier extraction or recombination issues. Whereas little room for maneuver is foreseen to tune the properties of evaporated metal oxide layers, reactive sputtering on the other hand is expected to allow manipulating the work-function of metal oxides. We will review in this presentation the potential of using reactively sputtered metal-oxides as CSC in c-Si solar cells. Preliminary results obtained with MoOx indicate that decreasing the oxidation state of the layer yields better transport properties but poorer selectivity.
AB - With high quality silicon wafers nowadays available at a low cost, further technology improvement relies on the development of inexpensive and highly efficient carrier-selective contacts (CSC). To this respect, evaporated MoOx hole-selective contacts recently brought some attention due to impressive transparency and carrier selectivity properties, and other materials are widely studied in other photovoltaics technologies (TiO2, WO3, V2O5, ... ). Compared to standard heterojunction devices using amorphous silicon as passivating layer and CSC, reported efficiencies for devices using evaporated MoOx layers still fall short due to carrier extraction or recombination issues. Whereas little room for maneuver is foreseen to tune the properties of evaporated metal oxide layers, reactive sputtering on the other hand is expected to allow manipulating the work-function of metal oxides. We will review in this presentation the potential of using reactively sputtered metal-oxides as CSC in c-Si solar cells. Preliminary results obtained with MoOx indicate that decreasing the oxidation state of the layer yields better transport properties but poorer selectivity.
KW - carrier-selective contacts
KW - metal oxide
KW - selectivity
KW - silicon solar cells
UR - http://www.scopus.com/inward/record.url?scp=84961637116&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961637116&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2015.7356167
DO - 10.1109/PVSC.2015.7356167
M3 - Conference contribution
AN - SCOPUS:84961637116
T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Y2 - 14 June 2015 through 19 June 2015
ER -