Abstract
The switched dose rate technique has been proposed as an accelerated test technique for enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is applied are investigated in this paper. The variation of N ot and N it is characterized using gated lateral pnp transistors to understand the kinetics of device degradation related to differences in mechanisms between high dose rate and low dose rate irradiations.
Original language | English (US) |
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Article number | 6074973 |
Pages (from-to) | 2953-2960 |
Number of pages | 8 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 58 |
Issue number | 6 PART 1 |
DOIs | |
State | Published - Dec 2011 |
Externally published | Yes |
Keywords
- Bipolar devices
- ELDRS
- interface trapped charge
- oxide trapped charge
- total dose
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering