Evaluation of Carrier Trapping in SiNx Towards Ion Migration Measurements

Guillaume Von Gastrow, Jonathan Scharf, Jacob Clenney, Erick Martinez Loran, Rico Meier, Mariana I. Bertoni, David P. Fenning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


Sodium ion migration has been implicated in potential induced degradation of the shunting type. The kinetics of sodium migration in silicon nitride can be investigated using a simple capacitance-voltage characterization technique. However, we show that the charge trapping strongly affects the measurement and must be taken into consideration in the experimental approach. We perform a systematic analysis of charge carrier trapping in silicon nitride, allowing us to correct trapping effects that otherwise prevent sodium signal detection. We extract trapping and detrapping time constants both on the order of several hours. This shows that trapping cannot be ignored as it occurs relatively quickly and is constantly evolving in time. Accurate determination of sodium behavior in dielectric layers will facilitate robust co-optimization of these layers for optical, passivation, and barrier properties.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781728104942
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States


  • PID
  • Silicon
  • capacitance-voltage
  • sodium
  • trapping

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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