Establishing an accurate numerical model for the 2D-simulation of buried contact cells

Pietro P. Altermatt; Gernot Heiser; Tobias Kiesewetter; Keith R. McIntosh; Christiana Honsberg; Stuart R. Wenham; Martin A. Green

Establishing an accurate numerical model for the 2D-simulation of buried contact cells

Pietro P. Altermatt, Gernot Heiser, Tobias Kiesewetter, Keith R. McIntosh, Christiana Honsberg, Stuart R. Wenham, Martin A. Green

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

An accurate numerical model is established for the simulation of buried contact cells in two dimensions. The physical parameters and the approximations are discussed as well as the procedures that lead to the foundations of the model. The model is applied to bifacial cells with three different rear surface configurations: passivated by a thermally grown oxide (A), by a dopand-induced floating junction (B) and with a contacted junction (C). Especially when the cell is situated in a light-concentrating roof tile, configuration C performs far better than A and B. The two-dimensional effects of resistive losses in the semiconductor region of the cell are also discussed.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Editors	Anon
Publisher	IEEE
Pages	179-182
Number of pages	4
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: Sep 29 1997 → Oct 3 1997

Other

Other	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
City	Anaheim, CA, USA
Period	9/29/97 → 10/3/97

ASJC Scopus subject areas

Control and Systems Engineering
Condensed Matter Physics

Cite this

Altermatt, PP, Heiser, G, Kiesewetter, T, McIntosh, KR, Honsberg, C, Wenham, SR & Green, MA 1997, Establishing an accurate numerical model for the 2D-simulation of buried contact cells. in Anon (ed.), Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, pp. 179-182, Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference, Anaheim, CA, USA, 9/29/97.

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author = "Altermatt, {Pietro P.} and Gernot Heiser and Tobias Kiesewetter and McIntosh, {Keith R.} and Christiana Honsberg and Wenham, {Stuart R.} and Green, {Martin A.}",

year = "1997",

language = "English (US)",

pages = "179--182",

editor = "Anon",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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note = "Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

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T1 - Establishing an accurate numerical model for the 2D-simulation of buried contact cells

AU - Altermatt, Pietro P.

AU - Heiser, Gernot

AU - Kiesewetter, Tobias

AU - McIntosh, Keith R.

AU - Honsberg, Christiana

AU - Wenham, Stuart R.

AU - Green, Martin A.

PY - 1997

Y1 - 1997

N2 - An accurate numerical model is established for the simulation of buried contact cells in two dimensions. The physical parameters and the approximations are discussed as well as the procedures that lead to the foundations of the model. The model is applied to bifacial cells with three different rear surface configurations: passivated by a thermally grown oxide (A), by a dopand-induced floating junction (B) and with a contacted junction (C). Especially when the cell is situated in a light-concentrating roof tile, configuration C performs far better than A and B. The two-dimensional effects of resistive losses in the semiconductor region of the cell are also discussed.

AB - An accurate numerical model is established for the simulation of buried contact cells in two dimensions. The physical parameters and the approximations are discussed as well as the procedures that lead to the foundations of the model. The model is applied to bifacial cells with three different rear surface configurations: passivated by a thermally grown oxide (A), by a dopand-induced floating junction (B) and with a contacted junction (C). Especially when the cell is situated in a light-concentrating roof tile, configuration C performs far better than A and B. The two-dimensional effects of resistive losses in the semiconductor region of the cell are also discussed.

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AN - SCOPUS:0031348530

SP - 179

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BT - Conference Record of the IEEE Photovoltaic Specialists Conference

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PB - IEEE

T2 - Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Establishing an accurate numerical model for the 2D-simulation of buried contact cells

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ASJC Scopus subject areas

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