Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition

D. K. Fork; F. A. Ponce; J. C. Tramontana; T. H. Geballe

doi:10.1063/1.104903

Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition

D. K. Fork, F. A. Ponce, J. C. Tramontana, T. H. Geballe

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247 Scopus citations

Abstract

Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (-22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temperature and oxygen pressure. We believe this is the first demonstration of epitaxial MgO on Si. We employ MgO intermediate layers for superconducting epitaxial YBa₂Cu₃O_7-δ/ BaTiO₃ thin films on Si with a critical current density of 6.7×10⁵ A/cm² at 77 K.

Original language	English (US)
Pages (from-to)	2294-2296
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	20
DOIs	https://doi.org/10.1063/1.104903
State	Published - Dec 1 1991
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (-22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temperature and oxygen pressure. We believe this is the first demonstration of epitaxial MgO on Si. We employ MgO intermediate layers for superconducting epitaxial YBa2Cu3O7-δ/ BaTiO3 thin films on Si with a critical current density of 6.7×105 A/cm2 at 77 K.",

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AU - Fork, D. K.

AU - Ponce, F. A.

AU - Tramontana, J. C.

AU - Geballe, T. H.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (-22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temperature and oxygen pressure. We believe this is the first demonstration of epitaxial MgO on Si. We employ MgO intermediate layers for superconducting epitaxial YBa2Cu3O7-δ/ BaTiO3 thin films on Si with a critical current density of 6.7×105 A/cm2 at 77 K.

AB - Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (-22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temperature and oxygen pressure. We believe this is the first demonstration of epitaxial MgO on Si. We employ MgO intermediate layers for superconducting epitaxial YBa2Cu3O7-δ/ BaTiO3 thin films on Si with a critical current density of 6.7×105 A/cm2 at 77 K.

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Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition

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