@inproceedings{c75826e1075d4f24beeac50bd6457f8c,
title = "Epitaxial GaP grown on Silicon by MEE and MBE Techniques as a Pathway for Dilute Nitride-Si Tandem Solar Cells",
abstract = "Dilute nitride materials grown on Si offer a pathway for inexpensive, lattice matched multijunction solar cells. A comparison in device performance between two-terminal and three-terminal tandem solar cells with a dilute nitride top cell and a Si bottom cell was done by detailed-balance modelling. The hetero-integration of dilute nitrides on Si is an important part of realizing such a solar cell structure. Towards this end, a first key step is to optimize the growth of GaP on Si. In this work, the surface of GaP grown epitaxially on Si wafers of various orientations was studied using atomic force microscopy (AFM). Pits were observed on the GaP surface and showed an increase in feature size with higher growth temperatures.",
keywords = "Index Terms - Dilute nitrides, MBE, multijunction, Si",
author = "Srinath Murali and Irvin, {Nicholas P.} and Chaomin Zhang and King, {Richard R.} and Honsberg, {Christiana B.}",
year = "2019",
month = jun,
doi = "10.1109/PVSC40753.2019.8980577",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1044--1048",
booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",
note = "46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",
}