Enhancing the surface passivation of TiO2 coated silicon wafers

B. S. Richards; J. E. Cotter; C. B. Honsberg

doi:10.1063/1.1445810

Enhancing the surface passivation of TiO₂ coated silicon wafers

B. S. Richards, J. E. Cotter, C. B. Honsberg

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

In this letter, we demonstrate good surface passivation of lightly diffused n-type solar cell emitters using titanium dioxide (TiO₂) thin films treated with a furnace oxidation process. Transient-photoconductance decay, x-ray photoelectron spectroscopy, and scanning electron microscopy measurements indicate that the silicon dioxide layer formed at the TiO₂:Si interface provides excellent surface passivation. Emitter dark saturation current densities of 4.7×10^-14A/cm² are achieved by this method, demonstrating that TiO₂ films are compatible with high-efficiency solar cell structures.

Original language	English (US)
Pages (from-to)	1123-1125
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.1445810
State	Published - Feb 18 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1445810

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abstract = "In this letter, we demonstrate good surface passivation of lightly diffused n-type solar cell emitters using titanium dioxide (TiO2) thin films treated with a furnace oxidation process. Transient-photoconductance decay, x-ray photoelectron spectroscopy, and scanning electron microscopy measurements indicate that the silicon dioxide layer formed at the TiO2:Si interface provides excellent surface passivation. Emitter dark saturation current densities of 4.7×10-14A/cm2 are achieved by this method, demonstrating that TiO2 films are compatible with high-efficiency solar cell structures.",

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AU - Cotter, J. E.

AU - Honsberg, C. B.

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AB - In this letter, we demonstrate good surface passivation of lightly diffused n-type solar cell emitters using titanium dioxide (TiO2) thin films treated with a furnace oxidation process. Transient-photoconductance decay, x-ray photoelectron spectroscopy, and scanning electron microscopy measurements indicate that the silicon dioxide layer formed at the TiO2:Si interface provides excellent surface passivation. Emitter dark saturation current densities of 4.7×10-14A/cm2 are achieved by this method, demonstrating that TiO2 films are compatible with high-efficiency solar cell structures.

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Enhancing the surface passivation of TiO₂ coated silicon wafers

Abstract

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