Abstract
Electronic structures of wurtzite GaAs nanowires in the [0001] direction were studied using first-principles calculations. It was found that the band gap of GaAs nanowires experiences a direct-to-indirect transition when the diameter of the nanowires is smaller than ∼28 Å. For those thin GaAs nanowires with an indirect band gap, it was found that the gap can be tuned to be direct if a moderate external uniaxial strain is applied. Both tensile and compressive strain can trigger the indirect-to-direct gap transition. The critical strains for the gap-transition are determined by the energy crossover of two states in conduction bands.
Original language | English (US) |
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Article number | 193108 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 19 |
DOIs | |
State | Published - May 7 2012 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)