Using a full band Monte Carlo simulation the electron energy relaxation times of InAs nanowires along the [100] direction are shown to be greater than the energy relaxation time of bulk InAs. The full band structure and scattering rates of the nanowires are calculated using the sp3d5s∗ tight binding method and Fermi's Golden rule respectively. At moderately high electric fields, a runaway effect is also observed in the nanowires and is attributed to the 1D nature of the scattering rates.

Original languageEnglish (US)
Article number012029
JournalJournal of Physics: Conference Series
Issue number1
StatePublished - Oct 13 2015
Event19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, EDISON 2015 - Salamanca, Spain
Duration: Jun 29 2015Jul 2 2015

ASJC Scopus subject areas

  • General Physics and Astronomy


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