Abstract
Detailed calculations of the time and energy dependence of the distribution function for optically created electrons in the conduction band of Ge are presented. These indicate that state filling in the conduction and valence bands are strongly controlled by energy-gap narrowing induced by the optically generated interacting electrons and holes.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7033-7037 |
| Number of pages | 5 |
| Journal | Physical Review B |
| Volume | 18 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1978 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics