@inproceedings{8d32f992751940b1846483602a44e21f,
title = "Energy efficient in-memory computing platform based on 4-terminal spin hall effect-driven domain wall motion devices",
abstract = "In this paper, we propose an energy efficient in-memory computing platform based on novel 4-terminal spin Hall effect-driven domain wall motion devices that could be employed as both non-volatile memory cell and in-memory logic unit. The proposed designs lead to unity of memory and logic. The device to architecture level simulation results show that, with 45% area increase, the proposed in-memory computing platform achieves the write energy ∼ 15.6 fJ/bit which is more than one order lower than that of standard 1-transistor 1-magnetic tunnel junction counterpart while keeping the identical 1ns writing speed. In addition, the proposed in-memory logic scheme improves the operating energy by 61.3% as compared with the conventional nonvolatile in-memory logic designs.",
keywords = "Domain wall motion device, In-memory computing, Spin Hall effect",
author = "Shaahin Angizi and Zhezhi He and Deliang Fan",
year = "2017",
month = may,
day = "10",
doi = "10.1145/3060403.3060459",
language = "English (US)",
series = "Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI",
publisher = "Association for Computing Machinery",
pages = "77--82",
booktitle = "GLSVLSI 2017 - Proceedings of the Great Lakes Symposium on VLSI 2017",
note = "27th Great Lakes Symposium on VLSI, GLSVLSI 2017 ; Conference date: 10-05-2017 Through 12-05-2017",
}