Encapsulation of silver via nitridation of Ag/Ti bilayer structures

Y. L. Zou, Terry Alford, D. Adams, T. Laursen, K. N. Tu, R. Morton, S. S. Lau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


Ag/Ti bilayer films deposited on silicon dioxide substrates were annealed in ammonia ambient in the temperature range of 400 - 600 °C. Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) have shown that Ti segregates to both the surface to form a TiN(O) layer and to the Ti/SiO 2 interface to form a Ti-oxide/Ti-silicide bilayer. The annealed bilayer structure had minimal Ti accumulations in Ag. Resistivity values of approximately 2 μΩ-cm were obtained in encapsulated Ag bilayer films, which are comparable to that of the as-deposited. X-ray analysis confirmed the absence of intermetallic phase transformation.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS. Coffa, A. Polman, R.N. Schwartz
PublisherMaterials Research Society
Number of pages6
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996


OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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