Electronic structure and light-induced conductivity of a transparent refractory oxide

J. E. Medvedeva, A. J. Freeman, M. I. Bertoni, T. O. Mason

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.

Original languageEnglish (US)
Article number016408
Pages (from-to)016408-1-016408-4
JournalPhysical Review Letters
Issue number1
StatePublished - Jul 2 2004
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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