Electronic structure and light-induced conductivity of a transparent refractory oxide

J. E. Medvedeva; A. J. Freeman; M. I. Bertoni; T. O. Mason

doi:10.1103/PhysRevLett.93.016408

Electronic structure and light-induced conductivity of a transparent refractory oxide

J. E. Medvedeva, A. J. Freeman, M. I. Bertoni, T. O. Mason

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40 Scopus citations

Abstract

The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al₂O₃, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H ^- occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H⁺ one of the hopping centers a conductivity channel and so enhance the transport.

Original language	English (US)
Article number	016408
Pages (from-to)	016408-1-016408-4
Journal	Physical Review Letters
Volume	93
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.93.016408
State	Published - Jul 2 2004
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.93.016408

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title = "Electronic structure and light-induced conductivity of a transparent refractory oxide",

abstract = "The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.",

author = "Medvedeva, {J. E.} and Freeman, {A. J.} and Bertoni, {M. I.} and Mason, {T. O.}",

note = "Funding Information: We thank V. P. Dravid for sharing his unpublished electron microscopy results. Work supported by the DOE (Grant No. DE-FG02-88ER45372) and by the NSF through its MRSEC program at the Northwestern Materials Research Center. Computational resources have been provided by the DOE supported NERSC.",

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AU - Medvedeva, J. E.

AU - Freeman, A. J.

AU - Bertoni, M. I.

AU - Mason, T. O.

N1 - Funding Information: We thank V. P. Dravid for sharing his unpublished electron microscopy results. Work supported by the DOE (Grant No. DE-FG02-88ER45372) and by the NSF through its MRSEC program at the Northwestern Materials Research Center. Computational resources have been provided by the DOE supported NERSC.

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N2 - The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.

AB - The mechanism responsible for a drastic change of the conductivity following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO.7Al2O3, was investigated. It was observed that the charge transport associated with photoexcitation of an electron from H - occurs by electron hopping. The atoms participating in the hops determined the exact paths for the carrier migration and predicted a way to enhance the conductivity by specific doping. The results show that the proton implantation resulted in the appearance of new unoccupied states in the band-gap making H+ one of the hopping centers a conductivity channel and so enhance the transport.

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Electronic structure and light-induced conductivity of a transparent refractory oxide

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