@inproceedings{140142fd440143b3bd96e79679586102,
title = "Electronic and thermal properties of silicon nanowires",
abstract = "Electron mobility and thermal conductivity of silicon nanowires (SiNWs) of different cross sections were calculated by including scattering of electrons due to confined acoustic phonons, optical phonons, and surface roughness. A reduction in the acoustic phonon group velocity due to the spatial confinement in SiNWs is found to result in lower electron mobility and thermal conductivity compared to the bulk phonon approximation. Among the square SiNWs considered, a SiNW of cross section 6 nm × 6 nm was found to have the highest electron mobility due to the interplay of volume inversion and subband modulation.",
author = "Ramayya, {E. B.} and Dragica Vasileska and Stephen Goodnick and I. Knezevic",
year = "2007",
doi = "10.1149/1.2728855",
language = "English (US)",
isbn = "9781566775533",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "159--164",
booktitle = "ECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices",
edition = "4",
note = "13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting ; Conference date: 06-05-2007 Through 11-05-2007",
}