Transient subpicosecond Raman spectroscopy has been used to study electron velocity overshoot as well as nonequilibrium phonons in a GaAs-based p-i-n nanostructure under the application of high electric fields. Both electron distribution functions and nonequilibrium phonon populations were directly obtained in the velocity overshoot regime for a variety of electric field intensities and for different electron densities. All of our experimental results are compared with ensemble Monte Carlo calculations and good agreement is achieved.
|Original language||English (US)|
|Number of pages||9|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 1996|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics