Abstract
Using XTEM, REM and PL, the effect of structural quality on the optoelectronic properties of GaAs/AlxGa1-xAs quantum wells grown by MBE has been studied. In addition, the experimental results reveal that the flatness of interfaces in heterostructures can be improved by MBE technique.
Original language | English (US) |
---|---|
Pages (from-to) | 706-708 |
Number of pages | 3 |
Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
Volume | 11 |
Issue number | 9 |
State | Published - Sep 1990 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry