Abstract
The measurement of charge on dislocations in GaN by electron holography is described. Recent results are presented showing that edge dislocations in n-doped GaN are highly negatively charged, whereas those in p-doped GaN are positively charged. It is shown that the results are consistent with a model which assumes Fermi level pinning at dislocation states about 2.5 V below the conduction band edge. The application of electron holography to screw dislocations, and the dependence of the observations on the dislocation core structure, are also discussed.
Original language | English (US) |
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Pages (from-to) | 924-930 |
Number of pages | 7 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 234 |
Issue number | 3 |
DOIs | |
State | Published - Dec 2002 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics