A temperature-compensated high-performance BaZn1/3Ta 2/3O3 microwave substrate has been inductively loaded with metallic posts to realize an electromagnetic bandgap device with a 5-GHz bandgap. Capacitive gaps inserted in the device create resonances in the bandgap that are 1/20 the size of standard distributed designs. Simulation and measurement of the bandgap structures agree to 20 GHz.

Original languageEnglish (US)
Pages (from-to)371-375
Number of pages5
JournalMicrowave and Optical Technology Letters
Issue number2
StatePublished - Feb 2014


  • EBG
  • ceramic injection molding
  • dielectric resonators
  • electromagnetic bandgap
  • resonators

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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