Electrically controlled metalinsulator transition process in VO 2 thin films

Yong Zhao, Ji Hao, Changhong Chen, Zhaoyang Fan

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


We report the evolution process of VO 2 thin films from the insulating phase to the metallic phase under current injection for the two-electrode-based thin-film devices. Based on electrical characterization and Raman microscopic detection, it was found that there exist two critical current densities, based on which the insulator-to-metal transition process can be divided into three stages. In stage I with low current injection, the VO 2 film in the insulating (semiconducting) phase acts as a resistor until the first critical current density, above which the insulatormetal transition is a percolation process with metallic rutile and insulating monoclinic phases coexisting (stage II); while beyond a second critical current density, a filamentary current path with pure metallic phase is formed with the remaining part outside of the current path receding back to the pure insulating phase (stage III). We confirm that a critical current density is required for the onset of electrically induced insulator-to-metal transition in VO 2 thin films.

Original languageEnglish (US)
Article number035601
JournalJournal of Physics Condensed Matter
Issue number3
StatePublished - Jan 25 2012
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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