@inproceedings{6ccc1242eb584e9dad28b8233a592d5a,
title = "Electrical and thermal transport in alternative device technologies",
abstract = "A Monte Carlo device simulation tool has been employed to integrate the effects of self-heating into device simulation for Silicon on Insulator (SOI) devices. A comparison of the mobility and peak velocity overshoot has been performed between strained and unstrained Si devices. The effects of different types of materials for buried oxide layers (BOX) have been studied. Sapphire, Aluminum Nitride (AlN), Silicon dioxide (SiO2) and Diamond have been used as target materials of interest in the analysis and the effects of varying insulator layer thickness. It was observed that although AlN exhibits the best isothermal behavior, diamond is the best choice when thermal effects are accounted for.",
keywords = "Monte Carlo, Particle based device simulator, Selfheating effects, Silicon on insulator, Thermal effects",
author = "S. Qazi and K. Raleva and Dragica Vasileska",
year = "2014",
month = jan,
day = "1",
language = "English (US)",
isbn = "9781632665812",
series = "International Conference and Exhibition on Device Packaging 2014",
publisher = "International Microelectronics and Packaging Society, Nordic",
pages = "382--385",
booktitle = "International Conference and Exhibition on Device Packaging 2014",
note = "IMAPS International Conference and Exhibition on Device Packaging 2014, in Conjunction with the Global Business Council, GBC Spring Conference ; Conference date: 10-03-2014 Through 13-03-2014",
}