Electric-field-induced shift in the threshold voltage in LaAlO3/SrTiO3 heterostructures

Seong Keun Kim, Shin Ik Kim, Hyungkwang Lim, Doo Seok Jeong, Beomjin Kwon, Seung Hyub Baek, Jin Sang Kim

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


The two-dimensional electron gas (2DEG) at the interface between insulating LaAlO3 and SrTiO3 is intriguing both as a fundamental science topic and for possible applications in electronics or sensors. For example, because the electrical conductance of the 2DEG at the LaAlO3/SrTiO3 interface can be tuned by applying an electric field, new electronic devices utilizing the 2DEG at the LaAlO3/SrTiO3 interface could be possible. For the implementation of field-effect devices utilizing the 2DEG, determining the on/off switching voltage for the devices and ensuring their stability are essential. However, the factors influencing the threshold voltage have not been extensively investigated. Here, we report the voltage-induced shift of the threshold voltage of Pt/LaAlO3/SrTiO3 heterostructures. A large negative voltage induces an irreversible positive shift in the threshold voltage. In fact, after the application of such a large negative voltage, the original threshold voltage cannot be recovered even by application of a large positive electric field. This irreversibility is attributed to the generation of deep traps near the LaAlO 3 /SrTiO 3 interface under the negative voltage. This finding could contribute to the implementation of nanoelectronic devices using the 2DEG at the LaAlO3/SrTiO3 interface.

Original languageEnglish (US)
Article number8023
Pages (from-to)8023
Number of pages1
JournalScientific reports
StatePublished - Jan 2015
Externally publishedYes

ASJC Scopus subject areas

  • General


Dive into the research topics of 'Electric-field-induced shift in the threshold voltage in LaAlO3/SrTiO3 heterostructures'. Together they form a unique fingerprint.

Cite this