Effects of structural defects on diode properties in 4H-SiC

Brian Skromme, K. C. Palle, M. K. Mikhov, H. Meidia, S. Mahajan, X. R. Huang, W. M. Vetter, M. Dudley, K. Moore, S. Smith, T. Gehoski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


The influence of two types of structural defects on Schottky diodes in 4H-SiC is investigated. First, a structural transformation that takes place during oxidation or annealing of heavily n-doped wafers is studied using X-ray diffraction, high resolution TEM, secondary electron imaging (SEI), photoluminescence, and electrical measurements on Schottky diodes. Lamellae of 3C SiC with six bilayers are introduced primarily in the heavily doped substrates, and to a lesser extent in the lightly doped epilayers. Lowered Schottky barrier heights result and are spatially correlated to the 3C phase. The 3C lamellae exhibit charge contrast in SEI images where they intersect the surface. Second, we study isolated screw dislocations and show preliminary evidence that they are not the main factor controlling Schottky barrier height and ideality in Schottky diodes in lower-doped 4H-SiC wafers.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.E. Saddow, D.J. Larkin, N.S. Saks, A. Schoner
Number of pages6
StatePublished - 2002
EventSilicon Carbide 2002 - Materials, Processing and Devices - Boston, MA, United States
Duration: Dec 2 2002Dec 4 2002


OtherSilicon Carbide 2002 - Materials, Processing and Devices
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Effects of structural defects on diode properties in 4H-SiC'. Together they form a unique fingerprint.

Cite this