Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide

C. D. Lien; M. A. Nicolet; Peter Williams

doi:10.1016/0040-6090(86)90109-4

Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide

C. D. Lien, M. A. Nicolet, Peter Williams

Molecular Sciences, School of (SMS)

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Near-noble metal (nickel, platinum and palladium) films were evaporated onto silicon substrates, the surfaces of which were slightly oxidized in an oxygen plasma. The samples were irradiated with Si⁺ to different doses to break up the interfacial oxide. The samples were then annealed in vacuum at 400°C. For the low dose irradiated samples, the silicides formed after thermal annealing are laterally non-uniform. The interfacial oxygen profiles were found to be quite broad and to be located in the silicide. For the high dose irradiated samples, the silicides are laterally uniform. The interfacial oxygen profiles were found to be narrow and were located at the sample surface for the cases of nickel and platinum and at the silicon-silicide interface for the case of palladium. A model is proposed to explain the experimental results.

Original language	English (US)
Pages (from-to)	69-76
Number of pages	8
Journal	Thin Solid Films
Volume	136
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(86)90109-4
State	Published - Feb 1 1986

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(86)90109-4

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title = "Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide",

abstract = "Near-noble metal (nickel, platinum and palladium) films were evaporated onto silicon substrates, the surfaces of which were slightly oxidized in an oxygen plasma. The samples were irradiated with Si+ to different doses to break up the interfacial oxide. The samples were then annealed in vacuum at 400°C. For the low dose irradiated samples, the silicides formed after thermal annealing are laterally non-uniform. The interfacial oxygen profiles were found to be quite broad and to be located in the silicide. For the high dose irradiated samples, the silicides are laterally uniform. The interfacial oxygen profiles were found to be narrow and were located at the sample surface for the cases of nickel and platinum and at the silicon-silicide interface for the case of palladium. A model is proposed to explain the experimental results.",

author = "Lien, {C. D.} and Nicolet, {M. A.} and Peter Williams",

note = "Funding Information: The authors thank A. Ghaffari and R. Gorris for technical assistance. We gratefully acknowledge financial support by Philips Research Laboratories Signetics Corporation, Sunnyvale, CA.",

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T1 - Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide

AU - Lien, C. D.

AU - Nicolet, M. A.

AU - Williams, Peter

N1 - Funding Information: The authors thank A. Ghaffari and R. Gorris for technical assistance. We gratefully acknowledge financial support by Philips Research Laboratories Signetics Corporation, Sunnyvale, CA.

PY - 1986/2/1

Y1 - 1986/2/1

N2 - Near-noble metal (nickel, platinum and palladium) films were evaporated onto silicon substrates, the surfaces of which were slightly oxidized in an oxygen plasma. The samples were irradiated with Si+ to different doses to break up the interfacial oxide. The samples were then annealed in vacuum at 400°C. For the low dose irradiated samples, the silicides formed after thermal annealing are laterally non-uniform. The interfacial oxygen profiles were found to be quite broad and to be located in the silicide. For the high dose irradiated samples, the silicides are laterally uniform. The interfacial oxygen profiles were found to be narrow and were located at the sample surface for the cases of nickel and platinum and at the silicon-silicide interface for the case of palladium. A model is proposed to explain the experimental results.

AB - Near-noble metal (nickel, platinum and palladium) films were evaporated onto silicon substrates, the surfaces of which were slightly oxidized in an oxygen plasma. The samples were irradiated with Si+ to different doses to break up the interfacial oxide. The samples were then annealed in vacuum at 400°C. For the low dose irradiated samples, the silicides formed after thermal annealing are laterally non-uniform. The interfacial oxygen profiles were found to be quite broad and to be located in the silicide. For the high dose irradiated samples, the silicides are laterally uniform. The interfacial oxygen profiles were found to be narrow and were located at the sample surface for the cases of nickel and platinum and at the silicon-silicide interface for the case of palladium. A model is proposed to explain the experimental results.

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Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide

Abstract

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