Effects of hydrogen implantation temperature on ion-cut of silicon

J. K. Lee; M. Nastasi; N. David Theodore; A. Smalley; Terry Alford; J. W. Mayer; M. Cai; S. S. Lau

doi:10.1063/1.1755851

Effects of hydrogen implantation temperature on ion-cut of silicon

J. K. Lee, M. Nastasi, N. David Theodore, A. Smalley, Terry Alford, J. W. Mayer, M. Cai, S. S. Lau

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

The influence of hydrogen ion temperature on the nature of cleavage and layer transfer, and the electric properties of hydrogen implanted silicon (Si) was investigated. The elastic recoil detection was used to analyze the lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films. The IR spectroscopy was used to evaluate the nature of the implantation damage. It was observed that the transferred layer from room temperature hydrogen ion implantation was both thicker and atomically smoother than the the transferred layer produced by -140°C hydrogen implantation.

Original language	English (US)
Pages (from-to)	280-288
Number of pages	9
Journal	Journal of Applied Physics
Volume	96
Issue number	1
DOIs	https://doi.org/10.1063/1.1755851
State	Published - Jul 1 2004

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1755851

Cite this

@article{f6a1c10bbe0c4003a7c36b6f4ac60c5e,

title = "Effects of hydrogen implantation temperature on ion-cut of silicon",

abstract = "The influence of hydrogen ion temperature on the nature of cleavage and layer transfer, and the electric properties of hydrogen implanted silicon (Si) was investigated. The elastic recoil detection was used to analyze the lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films. The IR spectroscopy was used to evaluate the nature of the implantation damage. It was observed that the transferred layer from room temperature hydrogen ion implantation was both thicker and atomically smoother than the the transferred layer produced by -140°C hydrogen implantation.",

author = "Lee, {J. K.} and M. Nastasi and Theodore, {N. David} and A. Smalley and Terry Alford and Mayer, {J. W.} and M. Cai and Lau, {S. S.}",

year = "2004",

month = jul,

day = "1",

doi = "10.1063/1.1755851",

language = "English (US)",

volume = "96",

pages = "280--288",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Effects of hydrogen implantation temperature on ion-cut of silicon

AU - Lee, J. K.

AU - Nastasi, M.

AU - Theodore, N. David

AU - Smalley, A.

AU - Alford, Terry

AU - Mayer, J. W.

AU - Cai, M.

AU - Lau, S. S.

PY - 2004/7/1

Y1 - 2004/7/1

N2 - The influence of hydrogen ion temperature on the nature of cleavage and layer transfer, and the electric properties of hydrogen implanted silicon (Si) was investigated. The elastic recoil detection was used to analyze the lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films. The IR spectroscopy was used to evaluate the nature of the implantation damage. It was observed that the transferred layer from room temperature hydrogen ion implantation was both thicker and atomically smoother than the the transferred layer produced by -140°C hydrogen implantation.

AB - The influence of hydrogen ion temperature on the nature of cleavage and layer transfer, and the electric properties of hydrogen implanted silicon (Si) was investigated. The elastic recoil detection was used to analyze the lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films. The IR spectroscopy was used to evaluate the nature of the implantation damage. It was observed that the transferred layer from room temperature hydrogen ion implantation was both thicker and atomically smoother than the the transferred layer produced by -140°C hydrogen implantation.

UR - http://www.scopus.com/inward/record.url?scp=3142674321&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142674321&partnerID=8YFLogxK

U2 - 10.1063/1.1755851

DO - 10.1063/1.1755851

M3 - Article

AN - SCOPUS:3142674321

SN - 0021-8979

VL - 96

SP - 280

EP - 288

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Effects of hydrogen implantation temperature on ion-cut of silicon

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this