Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer

Hui Chen, Balaji Raghothamachar, William Vetter, Michael Dudley, Y. Wang, Brian Skromme

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations


An 8° off-axis 4H-SiC wafer with circular Schottky contacts fabricated on a CVD grown 4H-SiC homoepitaxial layer was studied to investigate the influence of various defects, including small (closed-core) screw dislocations (Burgers vector of le or 2c), hollow-core (micropipes; Burgers vector larger than 2c), threading edge dislocations (from conversion of basal plane dislocations from the substrate into the epilayer), grain boundaries and triangular defects, on the device performance in the form of breakdown voltages. The defects were examined using synchrotron white beam x-ray topography (SWBXT) based techniques and molten KOH etching. The devices commonly contained basal plane dislocations, small screw dislocations and threading edge dislocations, the latter two of which could give rise to low breakdown voltages for the devices. In addition, less commonly observed defects such as micropipes, grain boundaries and triangular defects are much more destructive to device performance than closed-core screw dislocations and threading edge dislocations.

Original languageEnglish (US)
Title of host publicationSilicon Carbide 2006 - Materials, Processing and Devices
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558998721, 9781558998728
StatePublished - 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 20 2006

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2006 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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