Effects of boron doping on the surface morphology and structural imperfections of diamond films

X. H. Wang; G. H.M. Ma; Wei Zhu; J. T. Glass; L. Bergman; K. F. Turner; R. J. Nemanich

doi:10.1016/0925-9635(92)90109-2

Effects of boron doping on the surface morphology and structural imperfections of diamond films

X. H. Wang, G. H.M. Ma, Wei Zhu, J. T. Glass, L. Bergman, K. F. Turner, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

This paper reports the surface morphology and structural imperfection of boron-doped diamond films prepared by microwave plasma enhanced chemical vapor deposition. It was found that boron dopants improved the structural quality of diamond films. The surface morphology consisted mainly of the {111} facets. A significant enhancement of nucleation density and consequent decrease of grain size was observed with the addition of diborane in the gas phase. Raman spectroscopy indicated that, with the introduction of boron dopants, the integrated intensity of the diamond peak at 1332 cm^-1 increased relative to the intensity of the non-diamond peak at about 1500 cm^-1, and the full-width at half maximum of the 1332 cm^-1 peak decreased. In addition, the 1.681 eV (738 nm) photoluminescence peak related to point defects was effectively reduced, or even eliminated by the boron dopants. Finally, transmission electron microscopy studies found that the densities of planar defects (mainly stacking faults and microtwins) also decreased with the boron addition.

Original language	English (US)
Pages (from-to)	828-835
Number of pages	8
Journal	Diamond and Related Materials
Volume	1
Issue number	7
DOIs	https://doi.org/10.1016/0925-9635(92)90109-2
State	Published - May 1 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanical Engineering
Physics and Astronomy(all)
Materials Chemistry
Chemistry(all)
Electrical and Electronic Engineering

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10.1016/0925-9635(92)90109-2

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title = "Effects of boron doping on the surface morphology and structural imperfections of diamond films",

abstract = "This paper reports the surface morphology and structural imperfection of boron-doped diamond films prepared by microwave plasma enhanced chemical vapor deposition. It was found that boron dopants improved the structural quality of diamond films. The surface morphology consisted mainly of the {111} facets. A significant enhancement of nucleation density and consequent decrease of grain size was observed with the addition of diborane in the gas phase. Raman spectroscopy indicated that, with the introduction of boron dopants, the integrated intensity of the diamond peak at 1332 cm-1 increased relative to the intensity of the non-diamond peak at about 1500 cm-1, and the full-width at half maximum of the 1332 cm-1 peak decreased. In addition, the 1.681 eV (738 nm) photoluminescence peak related to point defects was effectively reduced, or even eliminated by the boron dopants. Finally, transmission electron microscopy studies found that the densities of planar defects (mainly stacking faults and microtwins) also decreased with the boron addition.",

author = "Wang, {X. H.} and Ma, {G. H.M.} and Wei Zhu and Glass, {J. T.} and L. Bergman and Turner, {K. F.} and Nemanich, {R. J.}",

note = "Funding Information: The authors thank Dr K. Kobashi and his co-workers in the Electronics Research Laboratory, Kobe Steel, Ltd., Japan for preparing the diamond films for this research. They are also grateful to Dr K. Das for providing standards for SIMS analysis. Dr R. F. Davis is acknowledged for useful technical discussions. This research was supported by the New Energy and Industrial Technology Development Organization (NEDO) with the Ministry of International Trade and Industry (MITI) of Japan. TEM/EELS analysis was supported in part by the Division of Materials Sciences, US Department of Energy through the SHARE Program under contract DE-AC05-76OR00033 with Oak Ridge Associated Universities.",

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T1 - Effects of boron doping on the surface morphology and structural imperfections of diamond films

AU - Wang, X. H.

AU - Ma, G. H.M.

AU - Zhu, Wei

AU - Glass, J. T.

AU - Bergman, L.

AU - Turner, K. F.

AU - Nemanich, R. J.

N1 - Funding Information: The authors thank Dr K. Kobashi and his co-workers in the Electronics Research Laboratory, Kobe Steel, Ltd., Japan for preparing the diamond films for this research. They are also grateful to Dr K. Das for providing standards for SIMS analysis. Dr R. F. Davis is acknowledged for useful technical discussions. This research was supported by the New Energy and Industrial Technology Development Organization (NEDO) with the Ministry of International Trade and Industry (MITI) of Japan. TEM/EELS analysis was supported in part by the Division of Materials Sciences, US Department of Energy through the SHARE Program under contract DE-AC05-76OR00033 with Oak Ridge Associated Universities.

PY - 1992/5/1

Y1 - 1992/5/1

N2 - This paper reports the surface morphology and structural imperfection of boron-doped diamond films prepared by microwave plasma enhanced chemical vapor deposition. It was found that boron dopants improved the structural quality of diamond films. The surface morphology consisted mainly of the {111} facets. A significant enhancement of nucleation density and consequent decrease of grain size was observed with the addition of diborane in the gas phase. Raman spectroscopy indicated that, with the introduction of boron dopants, the integrated intensity of the diamond peak at 1332 cm-1 increased relative to the intensity of the non-diamond peak at about 1500 cm-1, and the full-width at half maximum of the 1332 cm-1 peak decreased. In addition, the 1.681 eV (738 nm) photoluminescence peak related to point defects was effectively reduced, or even eliminated by the boron dopants. Finally, transmission electron microscopy studies found that the densities of planar defects (mainly stacking faults and microtwins) also decreased with the boron addition.

AB - This paper reports the surface morphology and structural imperfection of boron-doped diamond films prepared by microwave plasma enhanced chemical vapor deposition. It was found that boron dopants improved the structural quality of diamond films. The surface morphology consisted mainly of the {111} facets. A significant enhancement of nucleation density and consequent decrease of grain size was observed with the addition of diborane in the gas phase. Raman spectroscopy indicated that, with the introduction of boron dopants, the integrated intensity of the diamond peak at 1332 cm-1 increased relative to the intensity of the non-diamond peak at about 1500 cm-1, and the full-width at half maximum of the 1332 cm-1 peak decreased. In addition, the 1.681 eV (738 nm) photoluminescence peak related to point defects was effectively reduced, or even eliminated by the boron dopants. Finally, transmission electron microscopy studies found that the densities of planar defects (mainly stacking faults and microtwins) also decreased with the boron addition.

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Effects of boron doping on the surface morphology and structural imperfections of diamond films

Abstract

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