Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells

J. L. Taggart; R. Fang; Yago Gonzalez Velo; Hugh Barnaby; Michael Kozicki; N. Chamele; A. Mahmud; M. Mitkova

doi:10.1109/RADECS.2016.8093120

Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells

J. L. Taggart, R. Fang, Yago Gonzalez Velo, Hugh Barnaby, Michael Kozicki, N. Chamele, A. Mahmud, M. Mitkova

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×10¹³ n/cm². This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×10¹³ n/cm², the CBRAM cells became irrecoverably locked into their final resistance state.

Original language	English (US)
Title of host publication	2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
Volume	2016-September
ISBN (Electronic)	9781509043668
DOIs	https://doi.org/10.1109/RADECS.2016.8093120
State	Published - Oct 31 2017
Event	16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016 - Bremen, Germany Duration: Sep 19 2016 → Sep 23 2016

Other

Other	16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016
Country/Territory	Germany
City	Bremen
Period	9/19/16 → 9/23/16

Keywords

cation
CBRAM
chalcogenide glass
conductive bridging
displacement damage
ECM
electrochemical metallization
memristors
nanoionic memory
neutrons
PMC
programmable metallization cell
radiation effects
ReRAM
resistive switching

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation

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10.1109/RADECS.2016.8093120

Cite this

Taggart, J. L., Fang, R., Gonzalez Velo, Y., Barnaby, H., Kozicki, M., Chamele, N., Mahmud, A., & Mitkova, M. (2017). Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells. In 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016 (Vol. 2016-September, pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RADECS.2016.8093120

Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells. / Taggart, J. L.; Fang, R.; Gonzalez Velo, Yago et al.
2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Taggart, JL, Fang, R, Gonzalez Velo, Y, Barnaby, H , Kozicki, M, Chamele, N, Mahmud, A & Mitkova, M 2017, Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells. in 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016. vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016, Bremen, Germany, 9/19/16. https://doi.org/10.1109/RADECS.2016.8093120

Taggart JL, Fang R, Gonzalez Velo Y, Barnaby H , Kozicki M, Chamele N et al. Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells. In 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016. Vol. 2016-September. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4 doi: 10.1109/RADECS.2016.8093120

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title = "Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells",

abstract = "CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×1013 n/cm2. This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state.",

keywords = "cation, CBRAM, chalcogenide glass, conductive bridging, displacement damage, ECM, electrochemical metallization, memristors, nanoionic memory, neutrons, PMC, programmable metallization cell, radiation effects, ReRAM, resistive switching",

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AU - Taggart, J. L.

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AU - Gonzalez Velo, Yago

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Chamele, N.

AU - Mahmud, A.

AU - Mitkova, M.

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N2 - CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×1013 n/cm2. This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state.

AB - CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×1013 n/cm2. This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state.

KW - cation

KW - CBRAM

KW - chalcogenide glass

KW - conductive bridging

KW - displacement damage

KW - ECM

KW - electrochemical metallization

KW - memristors

KW - nanoionic memory

KW - neutrons

KW - PMC

KW - programmable metallization cell

KW - radiation effects

KW - ReRAM

KW - resistive switching

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BT - 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016

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ER -

Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells

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Keywords

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