@inproceedings{55f35efc099947b397e6f3cffb351da5,
title = "Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells",
abstract = "CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×1013 n/cm2. This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state.",
keywords = "CBRAM, ECM, PMC, ReRAM, cation, chalcogenide glass, conductive bridging, displacement damage, electrochemical metallization, memristors, nanoionic memory, neutrons, programmable metallization cell, radiation effects, resistive switching",
author = "Taggart, {J. L.} and R. Fang and {Gonzalez Velo}, Yago and Hugh Barnaby and Michael Kozicki and N. Chamele and A. Mahmud and M. Mitkova",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016 ; Conference date: 19-09-2016 Through 23-09-2016",
year = "2017",
month = oct,
day = "31",
doi = "10.1109/RADECS.2016.8093120",
language = "English (US)",
series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--4",
booktitle = "2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016",
}