Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization

D. Adams, R. L. Spreitzer, S. W. Russell, N. D. Theodore, Terry Alford, J. W. Mayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations


Cu(Ti 27 at.%) and Cu(Cr 26 at.%) codeposited on silicon dioxide substrates were annealed in a flowing NH 3 ambient at 400 - 600°C for 30 min. The Ti segregates to both the surface to form a TiN(O) layer and to the alloy/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The Cr seems to migrate only to the free surface to form a CrN x layer. A 45 nm - thick Al film was deposited after nitridation, whereupon a second anneal was performed to evaluate these nitride layers as diffusion barriers. It was found that the Ti-nitride was stable up to 500°C as compared to Cr-nitride at 600°C.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994


OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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