Abstract
The connection between the minimum size of an electron wavepacket, and the introduction of an effective potential is discussed. The effective potential approach has a long history of use in trying to transition the gap between classical mechanics and quantum mechanics. An effective potential is one in which the quasi-classical regime is approximated through a density which arises from the effective potential W(x) through exp[-βW(x)]. The generation of the effective potential W(x) gives the effects of the onset of quantization in the system. In this paper, we study the use of the effective potential in a triangular well formed between the oxide and the depletion field of the semiconductor. We determine the quantization energy of the carriers in the potential well and their mean set-back from the interface. Finally, we show the connection between the effective potential and the Bohm-derived quantum potentials that have become of interest in simulations.
Original language | English (US) |
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Pages (from-to) | 419-423 |
Number of pages | 5 |
Journal | Superlattices and Microstructures |
Volume | 28 |
Issue number | 5-6 |
DOIs | |
State | Published - Nov 2000 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering