Abstract
Nitrogen-doped CVD diamond films with varying substitutional nitrogen content were prepared. Relatively large amounts of substitutional nitrogen were successfully incorporated into the growing diamond without degrading the quality of the diamond when melamine (C3H6N6) was used as a dopant precursor. It was found that substitutional nitrogen doping has a negligible effect on the electron emission properties of the CVD diamond films. Field emission characteristics from diamond powder coated emitters were also investigated. The effect of substitutional nitrogen incorporation on field emission from diamond is discussed.
Original language | English (US) |
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Title of host publication | Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC |
Place of Publication | Piscataway, NJ, United States |
Publisher | IEEE |
Pages | 269-270 |
Number of pages | 2 |
State | Published - 1998 |
Externally published | Yes |
Event | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: Jul 19 1998 → Jul 24 1998 |
Other
Other | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC |
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City | Asheville, NC, USA |
Period | 7/19/98 → 7/24/98 |
ASJC Scopus subject areas
- Surfaces and Interfaces