TY - JOUR
T1 - Effect of interfaces on the electrical behavior of (Pb 0.72La0.28)TiO3 thin films
AU - Lee, J. J.
AU - Alluri, P.
AU - Dey, Sandwip
PY - 1994/12/1
Y1 - 1994/12/1
N2 - Paraelectric (Pb0.72La0.28)TiO3 or PLT(28) thin films were deposited on platinum coated Si substrates by the sol-gel technique. Two distinct groups of top metals, namely MT (Ni, Cr, and Ti, i.e., transition metals) and MN (Pt, Au, and Ag, i.e., noble metals) formed Ohmic and Schottky contacts, respectively. A Schottky barrier height of 1.83 eV at the Pt-PLT interface was determined. The conventional Schottky emission and Fowler-Nordheim tunneling equations were modified to account for the voltage dependence of the interfacial permittivity. It was found that Schottky emission, thermionic tunneling, and Fowler-Nordheim tunneling mechanisms were predominant in the voltage ranges of 2<V<7, 7<V<16, and V≳16, respectively.
AB - Paraelectric (Pb0.72La0.28)TiO3 or PLT(28) thin films were deposited on platinum coated Si substrates by the sol-gel technique. Two distinct groups of top metals, namely MT (Ni, Cr, and Ti, i.e., transition metals) and MN (Pt, Au, and Ag, i.e., noble metals) formed Ohmic and Schottky contacts, respectively. A Schottky barrier height of 1.83 eV at the Pt-PLT interface was determined. The conventional Schottky emission and Fowler-Nordheim tunneling equations were modified to account for the voltage dependence of the interfacial permittivity. It was found that Schottky emission, thermionic tunneling, and Fowler-Nordheim tunneling mechanisms were predominant in the voltage ranges of 2<V<7, 7<V<16, and V≳16, respectively.
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U2 - 10.1063/1.112783
DO - 10.1063/1.112783
M3 - Article
AN - SCOPUS:21544458255
SN - 0003-6951
VL - 65
SP - 2027
EP - 2029
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 16
ER -