Abstract
Finite-element calculations of Schottky diode capacitance-voltage (C-V) curves show that an array of subsurface inclined quantum wells (QWs) produce negligible change in shape and slope of C-V curves, but significantly reduce the intercept voltage. This is particularly important for hexagonal SiC, in which current- or process-induced cubic inclusions are known to behave as electron QWs. These calculations naturally explain the surprisingly large effect of cubic inclusions on the apparent 4H-SiC Schottky barrier determined by C-V measurements, and together with the measured C-V data indicate the QW subband energy in the inclusions to be ~0.51 eV below the host 4H-SiC conduction band.
Original language | English (US) |
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Article number | 222109 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 22 |
DOIs | |
State | Published - 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)