Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

L. Borkovska; O. Yefanov; O. Gudymenko; Shane Johnson; V. Kladko; N. Korsunska; T. Kryshtab; Yu Sadofyev; Yong-Hang Zhang

doi:10.1016/j.tsf.2005.12.194

Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

L. Borkovska, O. Yefanov, O. Gudymenko, Shane Johnson, V. Kladko, N. Korsunska, T. Kryshtab, Yu Sadofyev, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Variations of the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature (T_GR = 442-505 °C) are investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods. The QWs grown at ∼480 °C demonstrated optimal PL characteristics, namely the highest PL intensity and small potential fluctuations. A good quality of heterointerfaces is proved by HRXRD. These structures emit at ∼1.29 μm at 300 K and are promising for application in long wavelength opto-electronic devices. The good structural properties of these QWs are assigned to Sb surfactant effect that allows shifting of the T_GR to higher temperatures without significant alloy decomposition. The increase of T_GR in its turn results in the decrease of the density of nonradiative defects that are the specific feature of low temperature growth.

Original language	English (US)
Pages (from-to)	786-789
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2005.12.194
State	Published - Oct 25 2006

Keywords

HRXRD
III-V semiconductors
PL
Quantum well
Surfactant-assisted growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.12.194

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title = "Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application",

abstract = "Variations of the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature (TGR = 442-505 °C) are investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods. The QWs grown at ∼480 °C demonstrated optimal PL characteristics, namely the highest PL intensity and small potential fluctuations. A good quality of heterointerfaces is proved by HRXRD. These structures emit at ∼1.29 μm at 300 K and are promising for application in long wavelength opto-electronic devices. The good structural properties of these QWs are assigned to Sb surfactant effect that allows shifting of the TGR to higher temperatures without significant alloy decomposition. The increase of TGR in its turn results in the decrease of the density of nonradiative defects that are the specific feature of low temperature growth.",

keywords = "HRXRD, III-V semiconductors, PL, Quantum well, Surfactant-assisted growth",

author = "L. Borkovska and O. Yefanov and O. Gudymenko and Shane Johnson and V. Kladko and N. Korsunska and T. Kryshtab and Yu Sadofyev and Yong-Hang Zhang",

year = "2006",

month = oct,

day = "25",

doi = "10.1016/j.tsf.2005.12.194",

language = "English (US)",

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T1 - Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

AU - Borkovska, L.

AU - Yefanov, O.

AU - Gudymenko, O.

AU - Johnson, Shane

AU - Kladko, V.

AU - Korsunska, N.

AU - Kryshtab, T.

AU - Sadofyev, Yu

AU - Zhang, Yong-Hang

PY - 2006/10/25

Y1 - 2006/10/25

N2 - Variations of the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature (TGR = 442-505 °C) are investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods. The QWs grown at ∼480 °C demonstrated optimal PL characteristics, namely the highest PL intensity and small potential fluctuations. A good quality of heterointerfaces is proved by HRXRD. These structures emit at ∼1.29 μm at 300 K and are promising for application in long wavelength opto-electronic devices. The good structural properties of these QWs are assigned to Sb surfactant effect that allows shifting of the TGR to higher temperatures without significant alloy decomposition. The increase of TGR in its turn results in the decrease of the density of nonradiative defects that are the specific feature of low temperature growth.

AB - Variations of the characteristics of Sb-surfactant assisted grown InGaAsN/GaAs single quantum wells (QWs) in dependence on QW growth temperature (TGR = 442-505 °C) are investigated by the photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) methods. The QWs grown at ∼480 °C demonstrated optimal PL characteristics, namely the highest PL intensity and small potential fluctuations. A good quality of heterointerfaces is proved by HRXRD. These structures emit at ∼1.29 μm at 300 K and are promising for application in long wavelength opto-electronic devices. The good structural properties of these QWs are assigned to Sb surfactant effect that allows shifting of the TGR to higher temperatures without significant alloy decomposition. The increase of TGR in its turn results in the decrease of the density of nonradiative defects that are the specific feature of low temperature growth.

KW - HRXRD

KW - III-V semiconductors

KW - PL

KW - Quantum well

KW - Surfactant-assisted growth

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JO - Thin Solid Films

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IS - 2 SPEC. ISS.

ER -

Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

Abstract

Keywords

ASJC Scopus subject areas

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