InAlN layers grown lattice-matched to GaN have been used to optimize the internal quantum efficiency of InGaN quantum-well device structures emitting in the green region of the visible spectrum. The electron-blocking properties of InAlN layers significantly depend on their growth temperature. Devices with InAlN layers grown at 780 and 840 °C exhibit significant variations in the quantum well emission characteristics, with 780 °C producing the highest emission efficiency. Three- and two-dimensional growth modes are observed in the layers grown at low and high temperatures, respectively. The former should allow higher hole transport through the narrow regions of the blocking layer.
ASJC Scopus subject areas
- Physics and Astronomy(all)