Droop improvement in high current range on PSS-LEDs

S. Tanaka; Y. Zhao; I. Koslow; C. C. Pan; H. T. Chen; J. Sonoda; S. P. Denbaars; S. Nakamura

doi:10.1049/el.2010.3306

Droop improvement in high current range on PSS-LEDs

S. Tanaka, Y. Zhao, I. Koslow, C. C. Pan, H. T. Chen, J. Sonoda, S. P. Denbaars, S. Nakamura

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9 to 7.6. At a wavelength of 447nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6mW and an EQE of 49.7 at a current of 20mA. The output power of the 9QW PSS-LED remains linear with increasing drive current, even up to relatively high current density, and the EQE is almost constant.

Original language	English (US)
Pages (from-to)	335-336
Number of pages	2
Journal	Electronics Letters
Volume	47
Issue number	5
DOIs	https://doi.org/10.1049/el.2010.3306
State	Published - Mar 3 2011
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2010.3306

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abstract = "The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9 to 7.6. At a wavelength of 447nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6mW and an EQE of 49.7 at a current of 20mA. The output power of the 9QW PSS-LED remains linear with increasing drive current, even up to relatively high current density, and the EQE is almost constant.",

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AU - Tanaka, S.

AU - Zhao, Y.

AU - Koslow, I.

AU - Pan, C. C.

AU - Chen, H. T.

AU - Sonoda, J.

AU - Denbaars, S. P.

AU - Nakamura, S.

PY - 2011/3/3

Y1 - 2011/3/3

N2 - The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9 to 7.6. At a wavelength of 447nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6mW and an EQE of 49.7 at a current of 20mA. The output power of the 9QW PSS-LED remains linear with increasing drive current, even up to relatively high current density, and the EQE is almost constant.

AB - The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9 to 7.6. At a wavelength of 447nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6mW and an EQE of 49.7 at a current of 20mA. The output power of the 9QW PSS-LED remains linear with increasing drive current, even up to relatively high current density, and the EQE is almost constant.

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Droop improvement in high current range on PSS-LEDs

Abstract

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