Abstract
The droop property of blue GaN light emitting diodes (LEDs) has been improved by creating a 9 quantum well (QW) LED on a patterned sapphire substrate (PSS). The droop ratio was improved from 45.9 to 7.6. At a wavelength of 447nm, and with standard on-header packaging, the 9QW PSS-LED had an output power of 27.6mW and an EQE of 49.7 at a current of 20mA. The output power of the 9QW PSS-LED remains linear with increasing drive current, even up to relatively high current density, and the EQE is almost constant.
Original language | English (US) |
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Pages (from-to) | 335-336 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 47 |
Issue number | 5 |
DOIs | |
State | Published - Mar 3 2011 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering