@inproceedings{9dd773b77d6b451aa577939eaa8e3f33,
title = "Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence",
abstract = "Low temperature (T < 300°C) in-situ doping protocols were developed for Ge1-ySny alloys with compositions above the indirect-to-direct gap crossover point, which were deposited using CVD. Trisilylphosphine (P(SiH3)3) was used as the n-type dopant source while diborane (B2H6) was used for p-type doping. This enabled the fabrication of pin diode structures with compositions up to y = 0.137. These photodiodes exhibit electroluminescence at wavelengths up to 2700 nm. Furthermore, it was demonstrated that n-type doping enhances the photoluminescence obtained from these materials.",
author = "Senaratne, {C. L.} and Gallagher, {J. D.} and C. Xu and Sims, {P. E.} and Jose Menendez and John Kouvetakis",
note = "Publisher Copyright: {\textcopyright} 2015 The Electrochemical Society.; Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",
year = "2015",
doi = "10.1149/06914.0157ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "14",
pages = "157--164",
editor = "He, {J. H.} and C. O'Dwyer and F. Ren and E. Douglas and C. Jagadish and S. Jang and Wang, {Y. L.} and Lynch, {R. P.} and Anderson, {T. J.} and Hite, {J. K.}",
booktitle = "State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58",
edition = "14",
}