Dopant activation in arsenic-implanted Si by susceptor-assisted low-temperature microwave anneal

Rajitha N P Vemuri, Mandar J. Gadre, N. D. Theodore, Terry Alford

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


It is important for nanoscale transistors to have abrupt junctions, which are difficult to achieve via high-temperature anneals of implanted semiconductor layers due to undesired dopant diffusion. The use of a single-frequency microwave cavity applicator, along with a SiC-Alumina susceptor/assistor, is suggested as an alternative postimplantation process. Secondary ion mass spectroscopy analysis of microwave-annealed As-implanted Si samples show minimal diffusion, compared to rapid thermal annealed samples. Cross-sectional transmission electron microscopy and Raman spectroscopy confirm damage repair and Si recrystallization upon low-temperature microwave annealing (up to 650 °C). Ion channeling and sheet resistance measurements validate dopant relocation and activation. The susceptor is used to provide surface heating to the high-atomic-number Z implanted sample to enable it to absorb microwaves and thereby recrystallize through volumetric heating.

Original languageEnglish (US)
Article number5910355
Pages (from-to)1122-1124
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - Aug 2011


  • Microwave annealing
  • solid-phase epitaxial growth (SPEG)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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